Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
نویسندگان
چکیده
منابع مشابه
Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates
SiC is a candidate material for microand nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVDgrown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. The film thickness was held constant at ~2.5 μm independent of the growth rate so as to allo...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2013
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4774087